QUANTIZATION EFFECTS IN ZNO ACCUMULATION LAYERS IN CONTACT WITH AN ELECTROLYTEEGER D; GOLDSTEIN Y.1979; PHYS. REV., B; USA; DA. 1979; VOL. 19; NO 2; PP. 1089-1097; BIBL. 21 REF.Article

ELECTRON ENERGY-LOSS SPECTROSCOPY FROM POLAR ZNO SURFACES.MARGONINSKY Y; EGER D.1978; J. ELECTRON SPECTROSC. RELAT. PHENOMENA; NETHERL.; DA. 1978; VOL. 13; NO 5; PP. 337-344; BIBL. 21 REF.Article

SURFACE AND BULK EXCITATIONS ON ZNO (0001) SURFACES STUDIED BY REFLECTION ELECTRON ENERGY LOSS SPECTROSCOPY.MARGONINSKI Y; EGER D.1976; PHYS. LETTERS, A; NETHERL.; DA. 1976; VOL. 59; NO 4; PP. 305-306; BIBL. 7 REF.Article

TUNNELLING CURRENT IN PBTE-PB⁰,8)SN⁰,2) TE HETEROJUNCTIONSZEMEL A; EGER D.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 11; PP. 1123-1126; BIBL. 22 REF.Article

VERTICAL UNSEEDED VAPOR GROWTH OF LARGE CDTE CRYSTALSYELLIN N; EGER D; SCHACHNA A et al.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 60; NO 2; PP. 343-348; BIBL. 18 REF.Article

VERY STRONG ACCUMULATION LAYERS ON ZNO SURFACES.EGER D; MANY A; GOLDSTEIN Y et al.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 55; NO 3; PP. 197-198; BIBL. 9 REF.Article

THE SPECTRAL RESPONSE OF PBTE/PB₁-_XSN_XTE HETEROSTRUCTURE DIODES AT LOW TEMPERATURESEGER D; ORON M; ZUSSMAN A et al.1983; INFRARED PHYSICS; ISSN 0020-0891; GBR; DA. 1983; VOL. 23; NO 2; PP. 69-76; BIBL. 22 REF.Article

RECOMBINATION MECHANISMS AND LASING THRESHOLD IN PB-SN-TL DIODE LASERSORON M; ZUSSMAN A; EGER D et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 90; NO 2; PP. 175-180; BIBL. 17 REF.Conference Paper

LONG WAVELENGTH PB_1-XSN_XTE HOMOSTRUCTURE DIODE LASERS HAVING A GALLIUM-DOPED CLADDING LAYERZUSSMAN A; FEIT Z; EGER D et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 344-346; BIBL. 16 REF.Article

ELECTRICAL PROPERTIES OF INDIUM-DOPED LPE LAYERS OF PB_1-XSN_XTEZEMEL A; EGER D; SHTRIKMAN H et al.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 2; PP. 301-312; BIBL. 20 REF.Article

CONTROL OF ELECTRON CONCENTRATION IN LIQUID-PHASE EPITAXIAL LAYERS OF PB_1-XSN_XTE BY INDIUM DOPINGEGER D; ZEMEL A; SHTRIKMAN H et al.1980; MATER. RES. BULL.; ISSN 0025-5408; USA; DA. 1980; VOL. 15; NO 9; PP. 1333-1338; BIBL. 15 REF.Article

TUNNELING-DETERMINED THRESHOLD CURRENT IN PB_1-XSN_XTE DIODE LASERSEGER D; ORON M; ZEMEL A et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 6; PP. 471-473; BIBL. 24 REF.Article

CARRIER CONCENTRATION AND MOBILITY OF PBTE AND PB_1-XSN_XTE LPE THIN LAYERSZEMEL A; TAMARI N; EGER D et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 8; PP. 5549-5551; BIBL. 14 REF.Article

LONG-WAVELENGTH PBSNTE-PBTESE LATTICE-MATCHED SINGLE-HETEROSTRUCTURE LASERS GROWN BY LPEZUSSMAN A; EGER D; ORON M et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 203-208; BIBL. 31 REF.Article

EXTREME ACCUMULATION LAYERS ON ZNO SURFACES DUE TO H⁺ IONS.GOLDSTEIN Y; MANY A; EGER D et al.1977; PHYS. LETTERS, A; NETHERL.; DA. 1977; VOL. 62; NO 1; PP. 57-58; BIBL. 11 REF.Article

JUNCTION MIGRATION IN PBTE-PBSNTE HETEROSTRUCTURESEGER D; ZEMEL A; ROTTER S et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 1; PP. 490-495; BIBL. 16 REF.Article

X-ray characterization of Rb exchanged KTPRAIZMAN, A; EGER, D; ORON, M et al.Journal of crystal growth. 1998, Vol 187, Num 2, pp 259-267, issn 0022-0248Article

Electrical and optical properties of Cu- and Ga-doped Hg_1-xCd_x Te layers grown by liquid-phase epitaxySARUSI, G; ZEMEL, A; EGER, D et al.Journal of applied physics. 1989, Vol 65, Num 2, pp 672-676, issn 0021-8979Article

Anomalous Hall effect in p-type Hg_1-xCd_xTe liquid-phase-epitaxial layersZEMEL, A; SHER, A; EGER, D et al.Journal of applied physics. 1987, Vol 62, Num 5, pp 1861-1868, issn 0021-8979Article

Influence des conditions de forage d'une couche sur la complétion des puitsEGER, D. A; RYBCHAK, E. V.Neftânaâ i gazovaâ promyšlennost′ (Kiev. 1960). 1985, Num 2, pp 28-30, issn 0548-1414Article

Carrier transport properties of p-type Hg_1-xCd_xTe liquid phase epitaxial layers in the mixed conduction rangeEGER, D; ZEMEL, A; MORDOWICZ, D et al.Applied physics letters. 1985, Vol 46, Num 10, pp 989-991, issn 0003-6951Article

Temperature dependence of mobility in heavily doped n-type PbTe layers grown by LPEFEIT, Z; ZEMEL, A; EGER, D et al.Physics letters. A. 1983, Vol 98A, Num 8-9, pp 451-454, issn 0375-9601Article

Optical characterization of KTiOPO₄ periodically segmented waveguides for second-harmonic generation of blue lightEGER, D; ORON, M; KATZ, M et al.Journal of applied physics. 1993, Vol 74, Num 7, pp 4298-4302, issn 0021-8979Article

The effect of the substrate mismatch on the LPE of HgZnTe and CdZnTe layersSHER, A; RAIZMAN, A; EGER, D et al.Journal of crystal growth. 1988, Vol 87, Num 4, pp 507-518, issn 0022-0248Article

ZnTe layers grown on GaAs substrates by low pressure MOCVDSHTRIKMAN, H; RAIZMAN, A; ORON, M et al.Journal of crystal growth. 1988, Vol 88, Num 4, pp 522-526, issn 0022-0248Article